Steep switching in trimmed-gate tunnel FET

Double-Gate Tunnel FET With High-κ Gate Dielectric

In this paper, we propose and validate a novel design for a double-gate tunnel fi eld-effect transistor (DG Tunnel FET), for which the simulations show significant improvements compared with single-gate devices using an SiO2 gate dielectric. For the fi rst time, DG Tunnel FET devices, which are using a high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current...

Ambipolar Effect Free Double Gate PN Diode Based Tunnel FET

An extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)

In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...

Hetero double gate-dielectric Tunnel FET with record high ION /IOFF ratio

To manage the increasing static leakage in low power applications and reduced Ion/Ioff due to aggressive scaling of MOS transistors, Tunnel FET (TFET) devices are considered as the most promising candidates because of their excellent immunity against such important short channel effects. Solutions for leakage reduction as well as improving on current of the device are sought at the device desig...

A Physics–based Model for Electrical Parameters of Double gate Hetero-material Nano Scale Tunnel FET

This paper focuses a hetero gate material dielectric DG TFET with low band gap source material, which offers high / on off I I ratio, sub 60mV/dec subthreshold swing along with significant improvement in on current. Here analytical model for 2D electric field is derived from Poisson’s equation and is used to determine the subthreshold swing, transconductance, output conductance, gate threshold ...